PART |
Description |
Maker |
K4S640832K K4S641632K K4S641632K-T K4S640832K-T_UC |
64Mb K-die SDRAM
|
SAMSUNG[Samsung semiconductor]
|
HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
|
Hynix Semiconductor TT electronics Semelab, Ltd.
|
EM4216MXXXX-XX EM412MXXXX-XX |
64Mb SDRAM
|
Eorex
|
WED3DG728V75D1 |
64MB - 8Mx72 SDRAM UNBUFFERED
|
White Electronic Design...
|
W3DG648V10D2 W3DG648V-D2 W3DG648V7D2 W3DG648V75D2 |
64MB- 8Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY5V62CF-S HY5V62CF-7 HY5V62CF |
SDRAM - 64Mb 4 BANKS X 512K X 32BIT SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
NT5CB128M16HP |
2Gb DDR3 SDRAM H-Die
|
Nanya
|